The Nanoscale & Quantum Phenomena Institute Seminar series presents Dr. Andrew Green discussing "β-Ga2O3: A New Semiconductor System" on Nov. 12 at 4:10 p.m.

Green is a chemist with the Air Force Research Lab at Wright Patterson Air Force Base in Ohio.

For virtual meeting information, contact the host, Dr. Hugh H. Richardson .

Abstract : Beta phase Gallium Oxide (GOX) is an emerging ultra-wide bandgap semiconductor with disruptive potential for ultra-low power loss, high-efficiency power applications. The material has a truly unique set of properties that combined have the potential to be the next semiconductor system since GaN’s discovery in the early 1990s. The critical field strength is the key enabling material parameter of GOX which allows sub-micrometer lateral transistor geometry. This property combined with ion-implantation technology and large area native substrates result in exceptional transistor properties such as low conduction power losses, faster power switching frequency and even radio frequency power. I will review the materials properties and how they have translated to lateral field-effect transistor developments while highlighting early achievements by our group.