The Physics & Astronomy Colloquium Series presents Thomas Ihn of ETH, Zurich discussing "Few-electron Graphene Quantum Dots" on April 1.

• Join on your computer or mobile app
• Click here to join the meeting
• Or call in (audio only)
• +1 614-706-6572,,486117536#   United States, Columbus
• Phone Conference ID: 486 117 536#

Abstract : It has become possible to fabricate high-quality quantum dots in bilayer graphene only recently (M. Eich  et al. ,  Phys. Rev. X 8 , 031023 (2018)), despite early predictions that the material would offer advantageous properties for realizing quantum dot qubits. In addition to the electron spin, the valley degree-of-freedom and the topological material

properties lead to interesting physics in these structures. For example, the valley degree-of-freedom leads to a valley-blockade phenomenon in double quantum dots, in addition to the well-known spin-blockade physics. Furthermore, topology leads to a gate-tunable valley g-factor in individual quantum dots.

In this talk I will describe the corresponding experiments that also involve electron counting and gate pulsing, leading to the first measurements of the spin-relaxation times in these systems.